Conventional methods to measure the positions of the front and rear surfaces of thin films with multiplewavelength interferometers are reviewed to make it clear how the method proposed here is novel and simple. Characteristics of the linear wavenumber-scanning interferometry used in the proposed method are analyzed in detail to make the measurement accuracy clearly. The positions of the front and rear surfaces of a silicon dioxide film with 4μm thickness is measured by utilizing the phases of the sinusoidal waves forms corresponding to each of the optical path differences contained in the interference signal. The experiments and the theoretical analysis show that the measurement error is about 15 nm.
内容記述
Dimensional Optical Metrology and Inspection for Practical Applications San Diego, California, USA, August 21, 2011
雑誌名
Proceedings of SPIE - the International Society for Optical Engineering
巻
8133
ページ
81330K-1 - 81330K-8
発行年
2011-09
出版者
International Society for Optical Engineering, SPIE
ISSN
0277786X
書誌レコードID
AA10619755
DOI
info:doi/10.1117/12.894454
権利
Copyright(C)2011 Society of Photo-Optical Instrumentation Engineers
Profile measurement of thin films by linear wavenumber-scanning interferometry
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