@inproceedings{oai:niigata-u.repo.nii.ac.jp:00031029,
 author = {Sasaki, Osami and Hirakubo, Satoshi and Choi, Samuel and Suzuki, Takamasa},
 book = {Proceedings of SPIE - the International Society for Optical Engineering, Proceedings of SPIE - the International Society for Optical Engineering},
 month = {Sep},
 note = {Conventional methods to measure the positions of the front and rear surfaces of thin films with multiplewavelength interferometers are reviewed to make it clear how the method proposed here is novel and simple. Characteristics of the linear wavenumber-scanning interferometry used in the proposed method are analyzed in detail to make the measurement accuracy clearly. The positions of the front and rear surfaces of a silicon dioxide film with 4μm thickness is measured by utilizing the phases of the sinusoidal waves forms corresponding to each of the optical path differences contained in the interference signal. The experiments and the theoretical analysis show that the measurement error is about 15 nm., Dimensional Optical Metrology and Inspection for Practical Applications  San Diego, California, USA, August 21, 2011},
 pages = {81330K-1--81330K-8},
 publisher = {International Society for Optical Engineering, SPIE},
 title = {Profile measurement of thin films by linear wavenumber-scanning interferometry},
 volume = {8133},
 year = {2011}
}