WEKO3
-
RootNode
アイテム
Growth and Characterization of Epitaxial CuInS2 Thin Films on Si(001) and on Gap(001)
http://hdl.handle.net/10191/5452
http://hdl.handle.net/10191/5452fc5d0d03-0ee2-4e5b-b7ce-909377a967a1
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (2.5 MB)
|
|
| Item type | 学位論文 / Thesis or Dissertation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2008-04-08 | |||||
| タイトル | ||||||
| タイトル | Growth and Characterization of Epitaxial CuInS2 Thin Films on Si(001) and on Gap(001) | |||||
| タイトル | ||||||
| タイトル | Growth and Characterization of Epitaxial CuInS2 Thin Films on Si(001) and on Gap(001) | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | chalcopyrite | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Cu-Au | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | RHEED | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | XRD | |||||
| 資源タイプ | ||||||
| 資源 | http://purl.org/coar/resource_type/c_46ec | |||||
| タイプ | thesis | |||||
| その他のタイトル | ||||||
| その他のタイトル | Si(001)およびGap(001)上へのCuInS2薄膜のエピタキシャル成長と構造評価 | |||||
| 著者 |
Magdadaro, vequizo Reynaldo
× Magdadaro, vequizo Reynaldo |
|||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 49247 | |||||
| 姓名 | マグダダロ, べギゾー レナルド | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | CuInS2 as an active absorber layer for future cost-effective, environment-friendly and highly efficient thin film solar cells is facing a problem with low efficiency, a problem not yet understood. Hence, it is necessary to investigate the fundamentals of such devices by studying the crystal quality of the absorber layer. To do this, single crystalline chalcopyrite CuInS2 has to be produced first.However, single crystalline chalcopyrite structure CuInS2 is hard to obtain in thin films even by molecular beam epitaxy since other competing phases such as Cu-Au and sphalerite structures usually coexist. For the first time, in this thesis the successful growth of single crystalline chalcopyrite structure of CuInS2 films is presented.Relaxed epitaxial CuInS2 thin films of various compositions are grown on Si(001) and on GaP(001) at substrate temperatures of 500 (for Si and GaP), 570 and 600°C for GaP alone using a homebuilt three-source vacuum evaporation system at about 10-5 Torr pressure. The Cu and In source temperature is varied from 980 to 1080°C and 650 to 750°C, respectively, to produce various film compositions of 0.70?[Cu]/[In]?2.9. Films grown on Si(001) are epitaxial chalcopyrite, Cu-Au, and/or sphalerite, and some unknown phases of CuInS2. Single crystalline chalcopyrite structure is not successfully grown on Si(001) at 500°C. Improved epitaxial films of CuInS2 are grown on GaP(001) at the same substrate temperature. Although, no rings in the RHEED patterns are observed on the films on GaP, still single crystalline chalcopyrite structure is not grown. Single crystalline c-axis orientated chalcopyrite ordering is successfully grown on GaP(001) at elevated substrate temperature 570°C in a narrow range of 1.28?[Cu]/[In]?1.41 ratios. For the first time, the photoluminescence emissions of the film grown at 570°C with only c-axis chalcopyrite ordering exhibited near band edge emission around 820nm (1.51eV) assigned to exciton bound to ionized donor. Little improvements are observed on films grown at 600°C. Unique surface morphology of CuInS2 films on Si and GaP are observed depending on substrate and substrate temperature. On both Si and GaP substrates, the CuInS2 crystal grain size increases with [Cu]/[In]; however, less dense grains are observed on Si. Dense and large grain size absorber layer is well suited for solar cell application. The In-rich and some stoichiometric films on GaP exhibit pyramidal and domeshaped island grains that correspond to spinel CuIn5S8. The growth of these island grains seems to obey the Stranski-Krastanow (SK) growth mode. | |||||
| 書誌情報 | p. 1-81, 発行日 2007-03-22 | |||||
| 出版者 | ||||||
| 出版者 | 新潟大学大学院自然科学研究科 | |||||
| 著者版フラグ | ||||||
| 値 | author | |||||
| 学位名 | ||||||
| 学位名 | 博士（工学） | |||||
| 学位授与機関 | ||||||
| 学位授与機関名 | 新潟大学 | |||||
| 学位授与年月日 | ||||||
| 学位授与年月日 | 2007-03-22 | |||||
| 学位授与番号 | ||||||
| 学位授与番号 | 13101甲第2849号 | |||||
| 学位記番号 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 新大院博（工）甲第240号 | |||||
Share
Cite as
Magdadaro, vequizo Reynaldo, 2007, Growth and Characterization of Epitaxial CuInS2 Thin Films on Si(001) and on Gap(001): 新潟大学大学院自然科学研究科, p. 1–81.
