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C-I, エレクトロニクス, I-光・波動", "bibliographic_titleLang": "en"}]}]}, "item_5_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "半導体レーザの発振波長が，磁界を印加することでシフトすることは半導体レーザの開発当初から知られている．しかしそのほとんどは，極低温・強磁界の下での研究であった．そこで，近年開発されてきた室温で連続発振するいくつかの半導体レーザを用いて実験を行ったところ，半導体レーザの内部構造により波長シフトの特性が大きく異なることが明らかになり，また磁界の方向によって発振波長がシフトする場合としない場合があることがわかった．従来の極低温・強磁界の実験条件では，主としてランダウ準位によりその波長シフトは説明されてきたが，今回我々が用いた室温・比較的弱磁界の条件においてはランダウ準位は形成されず，従来の理論では今回の波長シフトは説明できない．ここでは，現在までに得られた各種構造のGaAlAsレーザダイオードによる実験結果について述べると共に，波長シフトの機構とこの波長シフトを用いた波長制御について検討している．", "subitem_description_type": "Abstract"}]}, "item_5_full_name_3": {"attribute_name": "著者別名", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "42651", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "Sato, Takashi"}]}, {"nameIdentifiers": [{"nameIdentifier": "42652", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "Kawashima, Hidetoshi"}]}, {"nameIdentifiers": [{"nameIdentifier": "42653", 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