@article{oai:niigata-u.repo.nii.ac.jp:00003579,
 author = {木村, 勇雄 and 堀田, 憲康 and 温井, 秀樹 and 齋藤, 夏風 and 安川, 三郎},
 issue = {2},
 journal = {日本セラミックス協会学術論文誌, 日本セラミックス協会学術論文誌},
 month = {Feb},
 note = {Fine AlN powder was synthesized by vapor phase reaction of AlCl_3 and NH_3 at 720°-1190℃. Most of the powder deposited separately in two regions in the reactor. The powder deposited in teh range between the end of AlCl_3-feeding tube and the point 17 cm apart there from consisted of one phase AlN. The particle size and its distribution became fine and uniform at high reaction temperature or at high total flow rate of NH_3 and N_2. Fine powder with the median diameter of 0.16μm was synthesized at 1190℃ and particles were within a narrow range from 0.1 to 3.0 μm. In the range between 20 and 33 cm apart from the end of the AlCl_3-feeding tube, amorphous AlN deposited, which crystallized on heating at 1400℃. By-product, NH_4Cl which coexisted with amorphous AlN, was easily eliminated by heating at 500℃. The formation rate of crystalline AlN was 2.2g・h^<-1> and the total yield of crystalline and amorphous AlN was 79%.},
 pages = {206--210},
 title = {Al_2Cl_3とNH_3の気相反応によるAlN微粉末の合成},
 volume = {96},
 year = {1988}
}