@article{oai:niigata-u.repo.nii.ac.jp:00003578,
 author = {堀田, 憲康 and 木村, 勇雄 and 一箭, 健治 and 齋藤, 夏風 and 安川, 三郎 and 多田, 清志 and 北村, 照夫},
 issue = {7},
 journal = {日本セラミックス協会学術論文誌, 日本セラミックス協会学術論文誌},
 month = {Aug},
 note = {Fine AlN powder was synthesized continuously at 1350°-1550℃ by the floating nitridation technique. The nitriding temperature was reduced by using ultrapure Al and N_2 gas as raw materials. The obtained Ian powder was pure with trace amounts of metallic impurities and oxygen. The primary particle size of Ian powder obtained was 0.1 μm with 86% secondary particles in the range from 0.1 to 0.8 pm. The hollow spherical powder was obtained when unreacted-Al remained. The formation process of the fine Ian powder was presumed to be constituted by several elementary reaction processes, i. e., formation of a thin oxide layer on Al particles; disintegration of the thin oxide layer formation of an Ian layer; disintegration of the Ian layer; eruption of ultrafine Al droplets and Al vapor from the inside of particle; and formation of fine Ian particles by reaction of these Al's and N_2 gas. This Ian powder had good sinterability, and transparent AIN ceramics were obtained without any sintering aids.},
 pages = {731--735},
 title = {浮上窒化反応によるAlN微粉末の連続合成と性質},
 volume = {96},
 year = {1988}
}