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{"_buckets": {"deposit": "efdfcc8c-b214-4139-b934-4a1ead428ca8"}, "_deposit": {"id": "2124", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "2124"}, "status": "published"}, "_oai": {"id": "oai:niigata-u.repo.nii.ac.jp:00002124", "sets": ["454", "489"]}, "item_5_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2009-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "5", "bibliographicPageEnd": "054702-6", "bibliographicPageStart": "054702-1", "bibliographicVolumeNumber": "78", "bibliographic_titles": [{"bibliographic_title": "Journal of the Physical Society of Japan"}, {"bibliographic_title": "Journal of the Physical Society of Japan", "bibliographic_titleLang": "en"}]}]}, "item_5_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We investigate the electronic states around a single vacancy in silicon crystal by using the Green\u0027s function approach. The triply degenerate vacancy states within the band gap are found to be extended over a large distance 20 Å from the vacancy site and contribute to the reciprocal temperature dependence of the quadrupole susceptibility resulting in the elastic softening at low temperture. The Curie constant of the quadrupole susceptibility for the trigonal mode (Oyz ,Ozx, Oxy) is largely enhanced as compared to that for the tetragonal mode (O_2^0, O_2^2). The obtained results are consistent with the recent ultrasonic experiments in silicon crystal down to 20 mK. We also calculate the dipole and octupole susceptibilities and find that the octupole susceptibilities are extremely enhannced for a specific mode.", "subitem_description_type": "Abstract"}]}, "item_5_publisher_7": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "日本物理学会"}]}, "item_5_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "info:doi/10.1143/JPSJ.78.054702", "subitem_relation_type_select": "DOI"}}]}, "item_5_relation_31": {"attribute_name": "異版である", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://journals.jps.jp/doi/abs/10.1143/JPSJ.78.054702", "subitem_relation_type_select": "URI"}}]}, "item_5_rights_15": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (C) 2009 The Physical Society of Japan"}]}, "item_5_select_19": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_5_source_id_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00704814", "subitem_source_identifier_type": "NCID"}]}, "item_5_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "00319015", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Yamada, Takemi"}], "nameIdentifiers": [{"nameIdentifier": "7123", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamakawa, Youichi"}], "nameIdentifiers": [{"nameIdentifier": "7124", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ono, Yoshiaki"}], "nameIdentifiers": [{"nameIdentifier": "62", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-07-29"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "991.pdf", "filesize": [{"value": "402.7 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 402700.0, "url": {"label": "991.pdf", "url": "https://niigata-u.repo.nii.ac.jp/record/2124/files/991.pdf"}, "version_id": "fa3b32b1-15d8-46ce-9bce-c61727f928c1"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "silicon", "subitem_subject_scheme": "Other"}, {"subitem_subject": "vacancy", "subitem_subject_scheme": "Other"}, {"subitem_subject": "softening", "subitem_subject_scheme": "Other"}, {"subitem_subject": "quadrupole", "subitem_subject_scheme": "Other"}, {"subitem_subject": "elastic constant", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Quadrupole Susceptibility and Elastic Softening due to a Vacancy in Silicon Crystal", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Quadrupole Susceptibility and Elastic Softening due to a Vacancy in Silicon Crystal"}, {"subitem_title": "Quadrupole Susceptibility and Elastic Softening due to a Vacancy in Silicon Crystal", "subitem_title_language": "en"}]}, "item_type_id": "5", "owner": "1", "path": ["454", "489"], "permalink_uri": "http://hdl.handle.net/10191/26834", "pubdate": {"attribute_name": "公開日", "attribute_value": "2014-04-15"}, "publish_date": "2014-04-15", "publish_status": "0", "recid": "2124", "relation": {}, "relation_version_is_last": true, "title": ["Quadrupole Susceptibility and Elastic Softening due to a Vacancy in Silicon Crystal"], "weko_shared_id": null}
Quadrupole Susceptibility and Elastic Softening due to a Vacancy in Silicon Crystal
http://hdl.handle.net/10191/26834
http://hdl.handle.net/10191/26834dd9f28c2-cd78-425f-85b6-f084f43b48e8
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2014-04-15 | |||||
タイトル | ||||||
タイトル | Quadrupole Susceptibility and Elastic Softening due to a Vacancy in Silicon Crystal | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Quadrupole Susceptibility and Elastic Softening due to a Vacancy in Silicon Crystal | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | silicon | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | vacancy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | softening | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | quadrupole | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | elastic constant | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Yamada, Takemi
× Yamada, Takemi× Yamakawa, Youichi× Ono, Yoshiaki |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We investigate the electronic states around a single vacancy in silicon crystal by using the Green's function approach. The triply degenerate vacancy states within the band gap are found to be extended over a large distance 20 Å from the vacancy site and contribute to the reciprocal temperature dependence of the quadrupole susceptibility resulting in the elastic softening at low temperture. The Curie constant of the quadrupole susceptibility for the trigonal mode (Oyz ,Ozx, Oxy) is largely enhanced as compared to that for the tetragonal mode (O_2^0, O_2^2). The obtained results are consistent with the recent ultrasonic experiments in silicon crystal down to 20 mK. We also calculate the dipole and octupole susceptibilities and find that the octupole susceptibilities are extremely enhannced for a specific mode. | |||||
書誌情報 |
Journal of the Physical Society of Japan en : Journal of the Physical Society of Japan 巻 78, 号 5, p. 054702-1-054702-6, 発行日 2009-05 |
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出版者 | ||||||
出版者 | 日本物理学会 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00319015 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00704814 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1143/JPSJ.78.054702 | |||||
権利 | ||||||
権利情報 | Copyright (C) 2009 The Physical Society of Japan | |||||
著者版フラグ | ||||||
値 | author | |||||
異版である | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | URI | |||||
関連識別子 | http://journals.jps.jp/doi/abs/10.1143/JPSJ.78.054702 |