{"created":"2021-03-01T06:05:45.547171+00:00","id":2068,"links":{},"metadata":{"_buckets":{"deposit":"fa65eb5a-b928-472d-9bdb-a6a851468cec"},"_deposit":{"id":"2068","owners":[],"pid":{"revision_id":0,"type":"depid","value":"2068"},"status":"published"},"_oai":{"id":"oai:niigata-u.repo.nii.ac.jp:00002068","sets":["176:488:489","453:454"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"042233-4","bibliographicPageStart":"042233-1","bibliographicVolumeNumber":"150","bibliographic_titles":[{"bibliographic_title":"Journal of Physics: Conference Series"},{"bibliographic_title":"Journal of Physics: Conference Series","bibliographic_titleLang":"en"}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"To investigate the charge states of a silicon vacancy, we introduce a cluster model which includes both the Coulomb interaction U between electrons in the dangling bond and the coupling g between the electrons and Jahn-Teller phonons, and solve the model by using the numerical diagonalization method. It is found that, for U > 0 and g = 0, the ground state of the neutral charge state V0 is spin singlet (S = 0) and orbital doublet. When g is varied for a finite U, the ground state changes to the orbital triplet state with S = 1 at an intermediate coupling gc1, and finally changes to the orbital triplet state with S = 0 at a strong coupling gc2. The obtained result for g > gc2 is consistent with the low temperature elastic softening observed in non-doped crystalline silicon.","subitem_description_type":"Abstract"}]},"item_5_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing"}]},"item_5_relation_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"BA87701391","subitem_relation_type_select":"NCID"}}]},"item_5_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1088/1742-6596/150/4/042233","subitem_relation_type_select":"DOI"}}]},"item_5_select_19":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_5_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"17426588","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yamakawa, Youichi"}],"nameIdentifiers":[{"nameIdentifier":"6832","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ono, Yoshiaki"}],"nameIdentifiers":[{"nameIdentifier":"62","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-07-29"}],"displaytype":"detail","filename":"993.pdf","filesize":[{"value":"79.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"993.pdf","url":"https://niigata-u.repo.nii.ac.jp/record/2068/files/993.pdf"},"version_id":"c3b44ae5-b17a-4177-9683-3aedc4e93690"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Cluster Model Calculations for Charge States of a Silicon Vacancy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Cluster Model Calculations for Charge States of a Silicon Vacancy"},{"subitem_title":"Cluster Model Calculations for Charge States of a Silicon Vacancy","subitem_title_language":"en"}]},"item_type_id":"5","owner":"1","path":["454","489"],"pubdate":{"attribute_name":"公開日","attribute_value":"2014-04-16"},"publish_date":"2014-04-16","publish_status":"0","recid":"2068","relation_version_is_last":true,"title":["Cluster Model Calculations for Charge States of a Silicon Vacancy"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-12-15T03:34:53.928269+00:00"}