@article{oai:niigata-u.repo.nii.ac.jp:00002068,
 author = {Yamakawa, Youichi and Ono, Yoshiaki},
 issue = {4},
 journal = {Journal of Physics: Conference Series, Journal of Physics: Conference Series},
 month = {Mar},
 note = {To investigate the charge states of a silicon vacancy, we introduce a cluster model which includes both the Coulomb interaction U between electrons in the dangling bond and the coupling g between the electrons and Jahn-Teller phonons, and solve the model by using the numerical diagonalization method. It is found that, for U > 0 and g = 0, the ground state of the neutral charge state V0 is spin singlet (S = 0) and orbital doublet. When g is varied for a finite U, the ground state changes to the orbital triplet state with S = 1 at an intermediate coupling gc1, and finally changes to the orbital triplet state with S = 0 at a strong coupling gc2. The obtained result for g > gc2 is consistent with the low temperature elastic softening observed in non-doped crystalline silicon.},
 pages = {042233-1--042233-4},
 title = {Cluster Model Calculations for Charge States of a Silicon Vacancy},
 volume = {150},
 year = {2009}
}