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  1. 050 理学部
  2. 10 学術雑誌論文
  3. 10 査読済論文
  1. 0 資料タイプ別
  2. 01 学術雑誌論文

Cluster Model Calculations for Charge States of a Silicon Vacancy

http://hdl.handle.net/10191/26894
http://hdl.handle.net/10191/26894
4dd3d412-bcf0-4337-baef-e70df76e6a0f
名前 / ファイル ライセンス アクション
993.pdf 993.pdf (79.1 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2014-04-16
タイトル
タイトル Cluster Model Calculations for Charge States of a Silicon Vacancy
タイトル
言語 en
タイトル Cluster Model Calculations for Charge States of a Silicon Vacancy
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
著者 Yamakawa, Youichi

× Yamakawa, Youichi

WEKO 6832

Yamakawa, Youichi

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Ono, Yoshiaki

× Ono, Yoshiaki

WEKO 62

Ono, Yoshiaki

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抄録
内容記述タイプ Abstract
内容記述 To investigate the charge states of a silicon vacancy, we introduce a cluster model which includes both the Coulomb interaction U between electrons in the dangling bond and the coupling g between the electrons and Jahn-Teller phonons, and solve the model by using the numerical diagonalization method. It is found that, for U > 0 and g = 0, the ground state of the neutral charge state V0 is spin singlet (S = 0) and orbital doublet. When g is varied for a finite U, the ground state changes to the orbital triplet state with S = 1 at an intermediate coupling gc1, and finally changes to the orbital triplet state with S = 0 at a strong coupling gc2. The obtained result for g > gc2 is consistent with the low temperature elastic softening observed in non-doped crystalline silicon.
書誌情報 Journal of Physics: Conference Series
en : Journal of Physics: Conference Series

巻 150, 号 4, p. 042233-1-042233-4, 発行日 2009-03
出版者
出版者 IOP Publishing
ISSN
収録物識別子タイプ ISSN
収録物識別子 17426588
書誌レコードID
識別子タイプ NCID
関連識別子 BA87701391
DOI
識別子タイプ DOI
関連識別子 info:doi/10.1088/1742-6596/150/4/042233
著者版フラグ
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