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Cluster Model Calculations for Charge States of a Silicon Vacancy
http://hdl.handle.net/10191/26894
http://hdl.handle.net/10191/268944dd3d412-bcf0-4337-baef-e70df76e6a0f
名前 / ファイル | ライセンス | アクション |
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993.pdf (79.1 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2014-04-16 | |||||
タイトル | ||||||
タイトル | Cluster Model Calculations for Charge States of a Silicon Vacancy | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Cluster Model Calculations for Charge States of a Silicon Vacancy | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Yamakawa, Youichi
× Yamakawa, Youichi× Ono, Yoshiaki |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | To investigate the charge states of a silicon vacancy, we introduce a cluster model which includes both the Coulomb interaction U between electrons in the dangling bond and the coupling g between the electrons and Jahn-Teller phonons, and solve the model by using the numerical diagonalization method. It is found that, for U > 0 and g = 0, the ground state of the neutral charge state V0 is spin singlet (S = 0) and orbital doublet. When g is varied for a finite U, the ground state changes to the orbital triplet state with S = 1 at an intermediate coupling gc1, and finally changes to the orbital triplet state with S = 0 at a strong coupling gc2. The obtained result for g > gc2 is consistent with the low temperature elastic softening observed in non-doped crystalline silicon. | |||||
書誌情報 |
Journal of Physics: Conference Series en : Journal of Physics: Conference Series 巻 150, 号 4, p. 042233-1-042233-4, 発行日 2009-03 |
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出版者 | ||||||
出版者 | IOP Publishing | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 17426588 | |||||
書誌レコードID | ||||||
識別子タイプ | NCID | |||||
関連識別子 | BA87701391 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1088/1742-6596/150/4/042233 | |||||
著者版フラグ | ||||||
値 | author |