{"_buckets": {"deposit": "fa65eb5a-b928-472d-9bdb-a6a851468cec"}, "_deposit": {"id": "2068", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "2068"}, "status": "published"}, "_oai": {"id": "oai:niigata-u.repo.nii.ac.jp:00002068", "sets": ["454", "489"]}, "item_5_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2009-03", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4", "bibliographicPageEnd": "042233-4", "bibliographicPageStart": "042233-1", "bibliographicVolumeNumber": "150", "bibliographic_titles": [{"bibliographic_title": "Journal of Physics: Conference Series"}, {"bibliographic_title": "Journal of Physics: Conference Series", "bibliographic_titleLang": "en"}]}]}, "item_5_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "To investigate the charge states of a silicon vacancy, we introduce a cluster model which includes both the Coulomb interaction U between electrons in the dangling bond and the coupling g between the electrons and Jahn-Teller phonons, and solve the model by using the numerical diagonalization method. It is found that, for U \u003e 0 and g = 0, the ground state of the neutral charge state V0 is spin singlet (S = 0) and orbital doublet. When g is varied for a finite U, the ground state changes to the orbital triplet state with S = 1 at an intermediate coupling gc1, and finally changes to the orbital triplet state with S = 0 at a strong coupling gc2. The obtained result for g \u003e gc2 is consistent with the low temperature elastic softening observed in non-doped crystalline silicon.", "subitem_description_type": "Abstract"}]}, "item_5_publisher_7": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP Publishing"}]}, "item_5_relation_11": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "BA87701391", "subitem_relation_type_select": "NCID"}}]}, "item_5_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "info:doi/10.1088/1742-6596/150/4/042233", "subitem_relation_type_select": "DOI"}}]}, "item_5_select_19": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_5_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "17426588", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Yamakawa, Youichi"}], "nameIdentifiers": [{"nameIdentifier": "6832", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ono, Yoshiaki"}], "nameIdentifiers": [{"nameIdentifier": "62", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-07-29"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "993.pdf", "filesize": [{"value": "79.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 79100.0, "url": {"label": "993.pdf", "url": "https://niigata-u.repo.nii.ac.jp/record/2068/files/993.pdf"}, "version_id": "c3b44ae5-b17a-4177-9683-3aedc4e93690"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Cluster Model Calculations for Charge States of a Silicon Vacancy", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Cluster Model Calculations for Charge States of a Silicon Vacancy"}, {"subitem_title": "Cluster Model Calculations for Charge States of a Silicon Vacancy", "subitem_title_language": "en"}]}, "item_type_id": "5", "owner": "1", "path": ["454", "489"], "permalink_uri": "http://hdl.handle.net/10191/26894", "pubdate": {"attribute_name": "公開日", "attribute_value": "2014-04-16"}, "publish_date": "2014-04-16", "publish_status": "0", "recid": "2068", "relation": {}, "relation_version_is_last": true, "title": ["Cluster Model Calculations for Charge States of a Silicon Vacancy"], "weko_shared_id": null}