@article{oai:niigata-u.repo.nii.ac.jp:00001845,
 author = {Ishigaki, Tadashi and Toda, Kenji and Sakamoto, Tatsuya and Uematsu, Kazuyoshi and Sato, Mineo},
 issue = {11},
 journal = {IEICE transactions on electronics, IEICE transactions on electronics},
 month = {Nov},
 note = {Well-crystallized Ba2SiO4:Eu2+ powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO oc-curs at 1400–1600℃ from the SiO2 source (or SiO powder) in a reducing atmosphere. The formed SiO gas was transported by 95 vol% Ar - 5 vol% H2 gas and reacted with the raw material powders. The emission intensity of the Ba2SiO4:Eu2+ phosphor synthesized by the new vapor phase technique is about 2.6 times higher than that of a conventional solid-state reaction sample.},
 pages = {1745--1748},
 title = {Crystal Growth of Silicate Phosphors from the Vapor Phase},
 volume = {E94-C},
 year = {2011}
}