@article{oai:niigata-u.repo.nii.ac.jp:00001638,
 author = {Ishigaki, Tadashi and Madhusudan, Puttaswamy and Inoue, Michiyo and Kamei, Shinnosuke and Uematsu, Kazuyoshi and Toda, Kenji and Sato, Mineo},
 issue = {2},
 journal = {ECS Journal of Solid State Science and Technology, ECS Journal of Solid State Science and Technology},
 month = {Nov},
 note = {Certain silicate materials with different crystal structures show excellent luminescence properties. Furthermore, these silicate compounds have high chemical and thermal stability and considered as an excellent phosphor host materials. In this study, we report (Gd1−xEux)3BSi2O10 as a novel ultraviolet (UV) excited white phosphors prepared under solid state reaction and their luminescence properties at 393 nm excitation were investigated in detail. The as prepared (Gd1−xEux)3BSi2O10 phosphors showed red emission with UV (around 580–630 nm) and near-UV light (around 250–410 nm). The chromaticity coordinates (0.60, 0.34) of the prepared borosilicate phosphor were very close to the NTSC standard value (0.67, 0.33) and its emission intensity was almost similar to commercial red phosphor Y2O2S:0.05Eu3+. Further, as prepared (Gd1−xEux)3BSi2O10 material is considered to be an efficient red-emitting phosphor for UV based light emitting diodes (LED).},
 pages = {R3018--R3020},
 title = {Synthesis and Photoluminescence Studies of Eu3+ Activated Borosilicate Phosphor (Gd1-xEux)3BSi2O10 for White Light Emitting Diodes},
 volume = {2},
 year = {2012}
}