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Critical behaviour near the metal-insulator transition of a doped Mott insulator
Critical behaviour near the metal-insulator transition of a doped Mott insulator
Ono, Y.
Bulla, R.
Hewson, A. C.
Potthoff, M.
Copyright (C) 2001 EDP Sciences
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical potential in the change from hole to electron doping, for U larger than a critical value Uc, has been calculated analytically and is found to be in good agreement with the results of numerical methods. We have also derived analytic expressions for the compressibility, the quasiparticle weight, the double occupancy and the local spin susceptibility near half-filling as functions of the on-site Coulomb interaction and the doping.
EDP Sciences
2001-08
eng
journal article
http://hdl.handle.net/10191/26870
https://niigata-u.repo.nii.ac.jp/records/2619
info:doi/10.1007/PL00011147
AA11185661
14346028
The European physical journal. B, Condensed matter physics
The European physical journal. B, Condensed matter physics
22
3
283
290
https://niigata-u.repo.nii.ac.jp/record/2619/files/1026.pdf
application/pdf
158.4 kB
2019-07-29