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Crystal Growth of Silicate Phosphors from the Vapor Phase
Crystal Growth of Silicate Phosphors from the Vapor Phase
Ishigaki, Tadashi
Toda, Kenji
Sakamoto, Tatsuya
Uematsu, Kazuyoshi
Sato, Mineo
Copyright(C)2011 IEICE
本文データは学協会の許諾に基づきEJサイトから複製したものである
phosphor
green emission
silicon monoxide
Ba2SiO4:Eu2+
Well-crystallized Ba2SiO4:Eu2+ powders were grown on a substrate by the vapor phase reaction between a mixed powder (barium carbonate and europium oxide) and SiO gas. The vaporization of SiO oc-curs at 1400–1600℃ from the SiO2 source (or SiO powder) in a reducing atmosphere. The formed SiO gas was transported by 95 vol% Ar - 5 vol% H2 gas and reacted with the raw material powders. The emission intensity of the Ba2SiO4:Eu2+ phosphor synthesized by the new vapor phase technique is about 2.6 times higher than that of a conventional solid-state reaction sample.
The Institute of Electronics, Information and Communication Engineers
2011-11
eng
journal article
http://hdl.handle.net/10191/31131
https://niigata-u.repo.nii.ac.jp/records/1845
info:doi/10.1587/transele.E94.C.1745
http://search.ieice.org/
AA10826283
09168524
IEICE transactions on electronics
IEICE transactions on electronics
E94-C
11
1745
1748
https://niigata-u.repo.nii.ac.jp/record/1845/files/E94-C_11_1745-1748.pdf
application/pdf
4.2 MB
2019-07-29